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- Transistors - Bipolar (BJT) - Single, Pre-Biased
- ROHM Semiconductor
- Power - Max : 150 mW
- Current - Collector Cutoff (Max) : 500nA
- Resistor - Emitter Base (R2) : 47 kOhms
- Transistor Type : NPN - Pre-Biased
- DC Current Gain (hFE) (Min) @ Ic, Vce : 68 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
3 Records
Image | Part | Manufacturer | Description | MOQ | Stock |
Online Service
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ROHM Semiconductor | TRANS PREBIAS NP... |
1 | 23 | Get Quote | |
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ROHM Semiconductor | TRANS PREBIAS NP... |
1 | 3,000 | Get Quote | |
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ROHM Semiconductor | TRANS PREBIAS NP... |
1 | 1 | Get Quote |