- Manufacturer：
-
- onsemi (1)
- Diodes Incorporated (14)
- Nexperia (2)
- Vishay (5)
- Part Status：
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- Package / Case：
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- Power - Max：
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- Supplier Device Package：
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- FET Type：
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- FET Feature：
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- Current - Continuous Drain (Id) @ 25°C：
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- Rds On (Max) @ Id, Vgs：
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- Gate Charge (Qg) (Max) @ Vgs：
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- Input Capacitance (Ciss) (Max) @ Vds：
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39 Records
| Image | Part | Manufacturer | Description | MOQ | Stock |
Online Service
|
|---|---|---|---|---|---|---|
|
Infineon Technologies | MOSFET 2N-CH 30V 20A... |
1 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET 2N-CH 30V 20A... |
1 | 5,800 | Get Quote | |
|
|
Nexperia | MOSFET 2N-CH 30V 10.... |
1 | 5,800 | Get Quote | |
|
|
Vishay | MOSFET N/P-CH 30V 4... |
1 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET 2N-CH 30V 4.6... |
1 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET 2N-CH 30V 4.6... |
1 | 5,800 | Get Quote | |
|
|
Vishay | MOSFET N/P-CH 30V 4... |
1 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET 2N-CH 30V 4.6... |
1 | 5,800 | Get Quote | |
|
|
Infineon Technologies | MOSFET 2N-CH 30V 4.6... |
1 | 5,800 | Get Quote | |
|
|
Vishay | MOSFET 2N-CH 30V 5.3... |
1 | 5,800 | Get Quote | |
|
|
Diodes Incorporated | MOSFET BVDSS: 31V ... |
2,000 | 5,800 | Get Quote | |
|
|
Diodes Incorporated | MOSFET BVDSS: 31V ... |
3,000 | 5,800 | Get Quote | |
|
|
onsemi | MOSFET 2P-CH 30V 1.8... |
1 | 5,800 | Get Quote | |
|
|
Diodes Incorporated | MOSFET BVDSS: 31V ... |
2,000 | 5,800 | Get Quote | |
|
|
Diodes Incorporated | MOSFET BVDSS: 31V ... |
3,000 | 5,800 | Get Quote | |
|
|
Diodes Incorporated | MOSFET 2N-CH 30V 7.3... |
3,000 | 5,800 | Get Quote | |
|
|
Diodes Incorporated | MOSFET 2N/2P-CH 30V... |
2,500 | 5,800 | Get Quote | |
|
|
Vishay | MOSFET 2N-CH 30V 5.3... |
1 | 5,800 | Get Quote | |
|
|
Diodes Incorporated | MOSFET 2N/2P-CH 30V... |
1 | 51,997 | Get Quote | |
|
|
Texas Instruments | MOSFET 2N-CH 30V 5A... |
1 | 5,800 | Get Quote |
