- Part Status：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Power Dissipation (Max)：
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- FET Type：
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- Drain to Source Voltage (Vdss)：
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- Rds On (Max) @ Id, Vgs：
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- Vgs(th) (Max) @ Id：
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- Gate Charge (Qg) (Max) @ Vgs：
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- Input Capacitance (Ciss) (Max) @ Vds：
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- Drive Voltage (Max Rds On, Min Rds On)：
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24 Records
| Image | Part | Manufacturer | Description | MOQ | Stock |
Online Service
|
|---|---|---|---|---|---|---|
|
Vishay | MOSFET P-CH 20V 4.8A... |
1 | 5,800 | Get Quote | |
|
|
Vishay | MOSFET N-CH 100V 4.8... |
1 | 5,800 | Get Quote | |
|
|
Toshiba Electronic Devices and Storage Corporation | MOSFET P-CH 40V 4.8A... |
1 | 5,800 | Get Quote | |
|
|
onsemi | MOSFET N-CH 30V 4.8A... |
469 | 5,800 | Get Quote | |
|
|
Vishay | MOSFET P-CH 20V 4.8A... |
1 | 5,800 | Get Quote | |
|
|
Vishay | MOSFET N-CH 100V 4.8... |
1 | 5,800 | Get Quote | |
|
|
Diodes Incorporated | MOSFET N-CH 60V 4.8A... |
1 | 5,800 | Get Quote | |
|
|
onsemi | MOSFET N-CH 30V 4.8A... |
1,519 | 59,830 | Get Quote | |
|
|
NXP Semiconductors | MOSFET N-CH 30V 4.8A... |
834 | 5,800 | Get Quote | |
|
|
onsemi | PTNG 120V LL NCH IN... |
3,000 | 5,800 | Get Quote | |
|
|
Diodes Incorporated | MOSFET N-CH 20V 4.8A... |
3,000 | 5,800 | Get Quote | |
|
|
Diodes Incorporated | MOSFET N-CH 20V 4.8A... |
10,000 | 5,800 | Get Quote | |
|
|
Nexperia | MOSFET N-CH 60V 4.8A... |
4,500 | 5,800 | Get Quote | |
|
|
PANJIT | 60V N-CHANNEL ENHA... |
1 | 5,800 | Get Quote | |
|
|
Nexperia | MOSFET N-CH 20V 4.8A... |
1 | 5,800 | Get Quote | |
|
|
Vishay | MOSFET P-CH 20V 4.8A... |
1 | 5,800 | Get Quote | |
|
|
Nexperia | MOSFET N-CH 40V 4.8A... |
1 | 5,800 | Get Quote | |
|
|
Diodes Incorporated | MOSFET P-CH 60V 4.8A... |
1 | 5,800 | Get Quote | |
|
|
Diodes Incorporated | MOSFET N-CH 60V 4.8A... |
1 | 5,800 | Get Quote | |
|
|
Diodes Incorporated | MOSFET N-CH 45V 4.8A... |
1 | 5,800 | Get Quote |
