SPPO4N80C3
- Mfr.Part #
- SPPO4N80C3
- Manufacturer
- Rochester Electronics
- Package/Case
- -
- Datasheet
- Download
- Description
- N-CHANNEL POWER MOSFET
- Manufacturer :
- Rochester Electronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 4A (Tc)
- Drain to Source Voltage (Vdss) :
- 800 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 31 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 570 pF @ 100 V
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- TO-220-3
- Part Status :
- Active
- Power Dissipation (Max) :
- 63W (Tc)
- Rds On (Max) @ Id, Vgs :
- 1.3Ohm @ 2.5A, 10V
- Supplier Device Package :
- PG-TO220-3
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 3.9V @ 240µA
- Datasheets
- SPPO4N80C3